Wendland Beezhold, Ph.D.

Professor Emeritus
beezwend@isu.edu
(208) 282-2626
Physical Science Building, Rm 117A

Education

  • Ph.D. (1969), Physics, University of Washington
  • M.S. (1963), Physics, University of Washington
  • B.S. (1961), Physics, University of Washington
  • Physics Major (1957-1959), UCLA

Positions

  • 2000 - present: Visiting Professor, Idaho State University
  • 1998 - 2000: Senior Scientist, Center for Applied Physics, Sandia National Laboratories
  • 1996 - 1997: Deputy director, Center for Applied Physics, Sandia National Laboratories
  • 1993 - 1996: Program manager, Sandia National Laboratories
  • 1990 - 1992: Senior Department Manager, Sandia National Laboratories
  • 1977 - 1990: Division Supervisor, Sandia National Laboratories
  • 1976 - 1977: Deputy Director and then Director, MHD and Energy Research Program, Montana State University
  • 1970 - 1975: Member of the Technical Staff, Sandia National Laboratories

Selected Publications

These publications are relevant to present work (total list at ~75 publications).

P.E. Dodd, G. Vizkelethy, W. Beezhold, D.S. Walsh, M.R. Shaneyfelt, J.R. Schwank, and B.L. Doyle, "Device-level studies of dose-rate response using numerical simulations and transient radiation microscopy," presented at the 19th Hardened Electronics and Radiation Technology Conference, San Antonio, TX, March

S.N. Renfrow, W. Beezhold, PE. Dodd, D.S. Walsh, and B.L. Doyle, "Device level prompt photocurrent radiation microscopy using Sandia's ion microprobe facility," presented at the 18th Hardened Electronics and Radiation Technology Conference, Anaheim, CA, March 21-25, 2000, and accepted for publication in the J. Rad. Eff. Res. Engnrg.

W.P. Ballard, E.F. Hartman, W. Beezhold, D.E. Beutler, D. Campbell, R.E. Craven, T.B. Parson, N.E. Counts, D.C. Evans, L.D. Posey, W. Seidler, B. Passenheim, B. Ketterer, R. Whittaker, W. Hardwick, T.A. Stringer, M. Iverson, "TREE and IEMP Measurements on an Active Power Circuit Using Various Hardening Techniques and Bremsstrahlung Spectra," 1989 HEART Conference, Journal of Radiation Effects: Research and Engineering (1989).

D. E. Beutler, D.M. Fleetwood, W. Beezhold, D. Knott, L.J. Lorence, Jr., and B.L. Draper, "Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment," IEEE Transactions on Nuclear Science, Vol. NS-34, No. 6, December 1987.

W. Beezhold, L.J. Lorence, R.R. Hart, A.J. Smith, "A comparison of Measured Dose Enhancement Effects in LiF TLDS With 2-D Monte Carlo Predictions," IEEE Transactions on Nuclear Science, Vol. NS-33, No. 6, December 1986.

T.W.L. Sanford, J.A. Halblieb, W. Beezhold, L.J. Lorence, "An Experimental Verification of Non-equilibrated Bremsstrahlung Dosimetry Predictions for 0.75 MeV Electrons," IEEE Transactions on Nuclear Science, Vol. NS-33, No. 6, December 1986.

W. Beezhold, J. Benson, F.J. Agee, C.M. Gilman, V. Kenyon, and M. Montgomery, "Recent Advances in US DoD/DOE Laboratory Simulation Capabilities," Proceedings of the 1985 Hardened Electronics and Radiation Technology (HEART) Conference, Monterey, CA, July, 1985.

L.D. Posey, T.F. Wrobel, D.C. Evans, W. Beezhold, J.G. Kelly, C.J., MacCallum, F.N. Coppage, T.F. Leura, "MOS-Transistor Radiation Detectors and X-ray Dose-Enhancement Effects," IEEE Transactions on Nuclear Science, Vol. NS-32, No. 6, December 1985.

W. Beezhold, "Proton-Induced Characteristic X-ray Analysis of Na and Cl Impurity Atoms in SiO2 Tin Films," Appl. Phys. Lett. 24, 540 (1974).

W. Beezhold and K.L. Brower, "Electron Paramagnetic Resonance of the Lattice Damage in Boron-Implanted Intrinsic silicon," IEEE Trans Nucl. Sci. NS-20, 209 (Dec. 1973).

W. Beezhold and E. EerNissen, "Ion Implantation into Insulators: Charge Removal Techniques Using Ion Induced Characteristic X-rays," Appl. Phys. Lett. 21, 592 (1972).

W. Beezhold and K.L. Brower, "Electron Paramagnetic Resonance of the Lattice Damage in Oxygen-Implanted Silicon," App. Phys. 43, 3499 (1972).

W. Beezhold, J.A. Borders and S.T. Picraux, "Formation of SiC in Silicon by Ion Implantation," Phys. Lett. 18, 509-511 (1971).

W. Beezhold and E.A. Uehling, "Determination of the electric-Field-Gradient Tensor at the Arsenic Site in KH2AsO4 by Proton Relaxation Measurements," Physics Rev. 175, No. 2, 624, November 1968.

Synergistic Activities

Dr. Beezhold has experience in developing pulsed-power accelerators and has recently worked at the Idaho Accelerator Center (IAC) and at Sandia National Laboratories in the areas of:

  • using accelerators to expose microelectronic devices to radiation,
  • modeling and simulation of radiation effects in microelectronic devices and circuits,
  • body-tie investigations of SO1 microelectronic devices using an ion-beam microprobe.

He has served on several DOE national laboratory committees and is the past chairperson of the National Hardened Electronics and Radiation Technology (HEART) Conference Steering Committee.

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